器件名称: 2SC1004
功能描述: Silicon NPN Power Transistors
文件大小: 160.11KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1004
DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in horizontal deflection output stages for color TV receives.
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=? )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 1100 700 5 0.5 50 150 -55~150 UNIT V V V A W ? ?
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1004
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
700
V
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=150m A;IB=30mA
5.0
V
VBEsat
Base-emitter saturation voltage
IC=150m A;IB=30mA
1.5
V
ICBO
Collector cut-off current
VCB=800V;IE=0
10
A
IEBO
Emitter cut-off current
VEB=4V;IC=0
10
A
hFE
DC current gain
IC=150m A ; VCE=15V
30
160
fT
Transition frequency
IC=150m A ; VCE=15V
2.0
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1004
Fig.2 Outline dimensions
3
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