器件名称: 2SB974
功能描述: Silicon PNP Darlington Power Transistor
文件大小: 245.39KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB974
DESCRIPTION High DC Current Gain: hFE = 2000(Min)@ IC= -2A Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A Complement to Type 2SD1308
APPLICATIONS Designed for audio frequency power amplifier and low-speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25℃
w w
s c s i . w
VALUE -100 -100 -7 -5 -10 -0.5 30
UNIT V
n c . i m e
V V A A A
PC
W Collector Power Dissipation Ta=25℃ Junction Temperature Storage Temperature Range 1.5 150 -55~150 ℃ ℃
Tj Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB974
MAX
UNIT
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
IC= -2A, IB= -2mA
B
-1.5
V
Base-Emitter Saturation Voltage
IC= -2A, IB= -2mA
B
-2.0
V μA
Collector Cutoff Current
VCB= -100V, IE= 0
-1.0
IEBO hFE-1
Emitter Cutoff Current
VEB= -7V; IC= 0 IC= -2A; VCE= -2V 2000
-5
mA
DC Current Gain
20000
hFE-2
DC Current Gain
IC= -4A; VCE= -2V
Switching times
ton tstg tf
Turn-on Time
Storage Time
Fall Time
hFE-1 Cl……
