器件名称: 2SA673ADTZ-E
功能描述: Silicon PNP Epitaxial
文件大小: 60.34KB 共5页
简 介:2SA673, 2SA673A
Silicon PNP Epitaxial
REJ03G0626-0200 (Previous ADE-208-125) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA673 –35 –35 –4 –500 400 150 –55 to +150 2SA673A –50 –50 –4 –500 400 150 –55 to +150 Unit V V V mA mW °C
°C
Rev.2.00 Aug 10, 2005 page 1 of 4
2SA673, 2SA673A
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio DC current transfer ratio Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) hFE*1 hFE VBE Min –35 –35 –4 — — 60 10 — 2SA673 Typ — — — — –0.2 — — –0.64 Max — — — –0.5 –0.6 320 — — 2SA673A Min Typ Max –50 — — –50 –4 — — 60 10 — — — — –0.2 — — –0.64 — — –0.5 –0.6 320 — — V Unit V V V A V Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –20 V, IE = 0 IC = –150 mA, 2 IB = –15 mA* VCE = –3 V, IC = –10 mA VCE = –3 V, 2 IC = –500 mA* VCE = –3 V, IC =–10 mA
Notes: 1. The 2SA673 and 2SA673A are grouped by ……