器件名称: 2N5108
功能描述: isc Silicon NPN Power Transistor
文件大小: 33.36KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N5108
DESCRIPTION High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA Low Saturation Voltage Good Linearity of hFE APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
55
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current Collector Power Dissipation @TC=25℃
0.4
A
3.5 W
PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 1.0
175
℃
Tstg
Storage Temperature Range
-55~175
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2N5108
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 100mA; IB= 10mA
0.5
V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
0.1
mA
hFE
DC Current Gain
IC= 10mA; VCE= 10V
40
150
fT
Current-Gain—Bandwidth Product
IC= 50mA;VCE= 10V;f= 200MHz
1200
MHz
COB
Output Capacitance
IE= 0;VCB= 28V; ftest= 1.0MHz
3.3
pF
isc Website：www.iscsemi.cn
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