器件名称: 2N5067
功能描述: Silicon NPN Power Transistors
文件大小: 122.56KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·Complement to type 2N4901/4902/4903 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications.
PINNING PIN 1 2 3 Base Emitter DESCRIPTION
2N5067 2N5068 2N5069
Fig.1 simplified outline (TO-3) and symbol Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
固
体 导 电半
PARAMETER
CONDITIONS
2N5067 2N5068 2N5069
Collector-base voltage
VCEO
Collector-emitter voltage
INCH
ANG
2N5067 2N5068 2N5069
SEM
Open emitter
N O C I
R O T DUC
VALUE 40 60 80 40 60 80
UNIT
V
Open base
V
VEBO IC ICM IB PC Tj Tstg
Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature
Open collector
5 5 10 1
V A A A W ℃ ℃
TC=25℃
87.5 150 -65~200
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5067 VCEO(SUS) Collector-emitter sustaining voltage 2N5068 2N5069 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current IC=1A; IB=0.1A IC=5A ;IB=1A IC=1A ; VCE=2V IC=0.2A ;IB=0
……
