器件名称: 2N5052
功能描述: Silicon NPN Power Transistors
文件大小: 130.64KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5050 2N5051 2N5052
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER
VCBO
固
Collector-base voltage
体 导 电半
CONDITIONS
2N5050 2N5051 Open emitter
VCEO
Collector-emitter voltage
VEBO IC PD Tj Tstg
Emitter-base voltage Collector current
A H C IN
NG S
2N5050 2N5051 2N5052
2N5052
N O C EMI
R O T DUC
VALUE 125 150 200 125 150 200 7 2
UNIT
V
Open base
V
Open collector
V A W ℃ ℃
Total Power Dissipation Junction temperature Storage temperature
TC=25℃
40 150 -65~200
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5050 VCEO(SUS) Collector-emitter sustaining voltage 2N5051 2N5052 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4910 ICEO Collector cut-off current IC=2A; IB=0.5A IC=2A; IB=0.5A IC=750mA ; VCE=5V VCE=125V; IB=0 VCE=150V; IB=0 VCE=200V; IB=0 VCB=Rated VCBO; IE=0 VEB=7V; IC=0 IC=0.1A ;IB=0
2N5050 2N5051 2N5052
CONDITIONS
MIN 125 150 200
TYP.
MAX
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