器件名称: 2N5051
功能描述: Silicon NPN Power Transistors
文件大小: 55.04KB 共3页
简 介:Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION · ·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5050 2N5051 2N5052
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N5050 VCBO Collector-base voltage 2N5051 2N5052 2N5050 VCEO Collector-emitter voltage 2N5051 2N5052 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 125 150 200 125 150 200 7 2 40 150 -65~200 V A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT ℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5050 VCEO(sus) Collector-emitter sustaining voltage 2N5051 2N5052 VCEsat VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N4910 ICEO Collector cut-off current 2N4911 2N4912 ICBO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=2A; IB=0.5A IC=2A; IB=0.5A IC=750mA ; VCE=5V VCE=125V; IB=0 VCE=150V; IB=0 VCE=200V; IB=0 IC=0.1A ;IB=0
2N5050 2N5051 2N5052
CONDITIONS
MIN 125 150 200……
