器件名称: 2N5038
功能描述: Silicon NPN Power Transistors
文件大小: 97.55KB 共3页
简 介:Product Specification
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Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·High current APPLICATIONS ·They are especially intended for high current and fast switching applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5038/2N5039
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO PARAMETER 2N5038 Collector-base voltage 2N5039 2N5038 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5039 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 75 7 20 30 5 140 200 -65~200 V A A A W ℃ ℃ Open emitter 120 90 V CONDITIONS VALUE 150 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5038/2N5039
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VCE=5V 1.8 2N5039 2N5038 ICEO Collector cut-off current 2N5039 2N5038 ICEV Collector cut-off current 2N5039 2N5038 IEBO Emitter cut-off current 2N5039 hFE-1 DC current gain 2N5038 hFE-2 DC current gain 2N5039 Is/b Second breakdown collector current IC=10A ; VCE=5V VCE=28V, VCE=45V(t=1.0s Nonrepetitive) 5 0.9 A IC=2A ; VCE=5V IC=12A ; VCE=5V 2……
