器件名称: 2N4922
功能描述: Silicon NPN Power Transistors
文件大小: 47.08KB 共3页
简 介:Product Specification
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Silicon NPN Power Transistors
2N4921 2N4922 2N4923
DESCRIPTION ·With TO-126 package ·Complement to type 2N4918,2N4919 2N4920 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
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Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO PARAMETER 2N4921 Collector-base voltage 2N4922 2N4923 2N4921 VCEO Collector-emitter voltage 2N4922 2N4923 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 1 3 1 30 150 -65~150 V A A A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.16 UNIT ℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4921 VCEO Collector-emitter sustaining voltage 2N4922 2N4923 VCEsat VBEsat VBE Collector-emitter saturation voltage Emitter-base saturation voltage Emitter-base on voltage 2N4921 ICEO Collector cut-off current 2N4922 2N4923 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency O……