器件名称: 2N4919
功能描述: Silicon PNP Power Transistors
文件大小: 123.26KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N4918 2N4919 2N4920
DESCRIPTION ·With TO-126 package ·Complement to type 2N4921/4922/4923 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
·
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER
体 导 半 固电 N A H C IN
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature
VCBO
IC M E S GE
2N4918 2N4919 Open emitter 2N4920 2N4918 2N4919 2N4920 Open base Open collector
CONDITIONS
O
R O T C NDU
VALUE -40 -60 -80 -40 -60 -80 -5 -1 -3 -1
UNIT
V
VCEO
V
VEBO IC ICM IB PD Tj Tstg
V A A A W ℃ ℃
TC=25℃
30 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.16 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4918 VCEO(SUS) Collector-emitter sustaining voltage 2N4919 2N4920 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4918 ICEO Collector cut-off current 2N4919 2N4920 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB IC=-1.0A ;IB=-0.1A IC=-1.0A ;IB=-0.1A IC=-1A ; VCE=-1V VCE=-20V; IB=0 VC……
