器件名称: 2N4913
功能描述: Silicon NPN Power Transistors
文件大小: 40.5KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2N4913
DESCRIPTION Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain: hFE= 25-100 @IC= 2.5A Complement to Type 2N4904
APPLICATIONS Designed for general purpose use in power amplifier and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 40 40 5 5 1 87.5 200 -65~200 UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2N4913
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0
40
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
VBE(on) ICEO
Base-Emitter On Voltage
IC= 2.5A; VCE= 2V
1.4
V
Collector Cutoff Current
VCE= 40V; IB= 0
1.0
mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0 VCE= 40V; VBE(off)= -1.5V VCE= 40V; VBE(off)= -1.5V, TC=150℃ VEB=-5V; IC= 0
0.1 0.1 2.0 1.0
mA
ICEV
Collector……
