器件名称: 2N4912
功能描述: Silicon NPN Power Transistor
文件大小: 57.16KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N4912
DESCRIPTION Collector-Emitter Sustaining Voltage: VCEO(SUS)= 80V(Min) Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation Complement to Type 2N4900 APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 80 80 5 1 4 1 25 200 -65~200 UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.0 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage CONDITIONS IC= 100mA; IB= 0 IC= 1A; IB= 0.1A IC= 1A; IB= 0.1A IC= 1A ; VCE= 1V VCE= 80V;VBE(off)= 1.5V VCE= 80V;VBE(off)= 1.5V;TC=150℃ VCE= 40V; IB= 0 VCB= 60V; IE= 0 VEB= 5V; IC= 0 IC= 50mA ; VCE= 1V IC= 500mA ; VCE= 1V IC= 1A ; VCE= 1V 40 20 10 3 MIN 80 TYP.
2N4912
MAX
UNIT V
VCE(sat) VBE(sat) VBE(on) ICEX ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 f……
