器件名称: 2N4902
功能描述: PNP SILICON TRANSISTORS, EPITAXIAL BASE
文件大小: 130.1KB 共3页
简 介:PNP SILICON TRANSISTORS, EPITAXIAL BASE
LF Large signal power amplification Switching medium current
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
Collector to Base Voltage
Ratings
2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 tp=5 ms 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902
Value
-40 -60 -80 -40 -60 -80 -40 -60 -80 -5.0 -40 -60 -80 -5
Unit
V
VCEO
#Collector-Emitter Voltage
V
VCER
VEBO
Collector-Emitter Voltage
V
Emitter-Base Voltage
V V
VCEX
Collector-Base Voltage
VBE=1.5 V
IC
Collector Current – Continuous
A
ICM
Collector Current – Peak
-10
A
IB
Base Current – Continuous
-1
A
PTOT TJ TSTG
Power Dissipation
87.5
W
Junction Temperature
200 -65 to +200
°C °C
2N4903
Storage Temperature 2N4901 2N4902 2N4903
3
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Thermal Resistance, Junction to Case Junction to Free Air Thermal Resistance
Value
2 47.3
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(BR)
Ratings
Collector-Emitter Breakdown Voltage)
Test Condition(s)
IC=200 mAdc, IB=0 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901
Min
-40 -60 -80 20
Typ
-
Mx
-
Unit
V
VCE=-2.0 V, IC=-1.0 A
-
80 V
hFE
DC Current Gain (*) VCE=-2.0 V, IC=-5.0 A
7 -
-
0.1 0.1 0.1 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 -1.0 mA mA
ICBO
Collector-Base cut-off Current
ICEX
Co……
