器件名称: 2N4900
功能描述: Silicon PNP Power Transistors
文件大小: 131.56KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION · ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N4898 2N4899 2N4900
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
固 I
VCEO
M E S E G N A H NC
Collector-base voltage 2N4899 2N4900 2N4898 2N4899 Collector-emitter voltage 2N4900 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃
体 导 半 电
PARAMETER
2N4898
Open emitter
R O T C U D N ICO
CONDITIONS VALUE -40 -60 -80 -40 -60 -80
UNIT
V
Open base
V
VEBO IC ICM IB PD Tj Tstg
Open collector
-5 -1.0 -4.0 -1.0 25 150 -65~200
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4898 VCEO(SUS) Collector-emitter sustaining voltage 2N4899 2N4900 VCEsat VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N4898 ICEO Collector cut-off current 2N4899 2N4900 IC=-1A; IB=-0.1A IC=-1A ;IB=-0.1A IC=-1A ; VCE=-1V VCE=-20V; IB=0 VCE=-30V; IB=0……
