器件名称: 2N4864
功能描述: Silicon NPN Power Transistors
文件大小: 130.67KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4864
DESCRIPTION
With TO-66 package Continuous collector current-IC=2A High VCEO:120V (Min)
APPLICATIONS
For use in general-purpose switching and linear amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 140 120 7 2 16 150 -65~200 UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case MAX 7.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) VBE(on) ICEX ICEO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.1 A ; IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A IC=0.5A ; VCE=5V VCE=140V;VBE(off)=1.5V TC=150℃ VCE=120V; IB=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.……
