器件名称: 2N4398
功能描述: Silicon PNP Power Transistors
文件大小: 115.7KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
2N4398 2N4399 2N5745
With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area
APPLICATIONS
For use in power amplifier and switching circuits applications.
PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER 2N4398 VCBO Collector-base voltage 2N4399 2N5745 2N4398 VCEO Collector-emitter voltage 2N4399 2N5745 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 2N4398/4399 2N5745 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -30 -20 -7.5 200 200 -65~200 V A A W V V UNIT
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCE(sat)-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 IC=-10A; IB=-1A IC=-0.2A ;IB=0
2N4398 2N4399 2N5745
SYMBOL
CONDITIONS
MIN -40 -60 -80
TYP.
MAX
UNIT
V
-0.75 -1.0 -1.0 -1.5 -2.0 -4.0 -1.6 -1.7 -1.85 -2.……
