器件名称: 2N3226
功能描述: Silicon NPN Power Transistors
文件大小: 129.84KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3226
DESCRIPTION
With TO-3 package Excellent safe operating area Low collector saturation voltage
APPLICATIONS
For power amplifier and switching circuits applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 35 35 5 5 75 150 -65~200 UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IC=3A; IB=0.3A IC=5A ;IB=1.0A IC=3A ; VCE=4V VCE=35V; IB=0 VCB=35V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V 40 20 MIN 35 TYP.
2N3226
MAX
UNIT V
1.0 2.0 2.0 1.0 0.1 0.1
V V V mA mA mA
2
Inchange Semiconductor
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