器件名称: 2N3196
功能描述: Silicon PNP Power Transistors
文件大小: 107.62KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N3196
DESCRIPTION
With TO-3 package Excellent safe operating area Low collector saturation voltage
APPLICATIONS
For medium-speed switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -5 75 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-5A; IB=-1A IC=-5A ; VCE=-4V VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-4V IC=-3A ; VCE=-4V 30 15 MIN -60 TYP.
2N3196
SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2
MAX
UNIT V
-1.5 -2.0 -5.0 -0.1 -1.0
V V mA mA mA
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Tr……
