器件名称: 2N3054
功能描述: Silicon NPN Power Transistors
文件大小: 166.8KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3054 2N3054A
DESCRIPTION ·With TO-66 package APPLICATIONS ·Designed for general purpose switching and amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER CONDITIONS Open emitter Open base Open collector
体 导 半 固电
Collector-base voltage Collector-emitter voltage Emitter-base voltage
INC
Collector current
Base current
M E S E HANG
2N3054 TC=25℃ 2N3054A
DU N O IC
CTOR
90 55 7 4 2 25
VALUE
UNIT V V V A A W
Power dissipation Junction temperature Storage temperature
75 200 -65~200 ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER 2N3054 Rth j-C Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 ℃/W UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150℃ VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V
2N3054 2N3054A
MIN 55
TYP.
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