器件名称: 1SS84
功能描述: Silicon Epitaxial Planar Diode for High Speed Switching
文件大小: 21.58KB 共3页
简 介:ADE-208-151A(Z)
1SS84 Silicon Epitaxial Planar Diode for High Speed Switching
Rev. 1 Aug. 1995 Features
Low reverse current. High reliability with glass seal.
Outline
Ordering Information
Type No. Cathode 2nd band 3rd band Package Code
1 3rd band 2nd band Cathode band
2
1SS84
Light Blue Dark Green Dark Green DO-35
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Average forward current Power dissipation Junction temperature Storage temperature * Within 1s forward surge current.
Symbol VRM VR IFM IFSM * Io Pd Tj Tstg
Value 75 70 450 1 150 250 175 -65 to +175
Unit V V mA A mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol Min VF IR1 IR2 IR3 C trr — — — — — — Typ — 0.3 — — — — Max 0.8 3 10 100 5 50 pF ns nA Unit V Test Condition IF = 10 mA VR = 0.3 V VR = 20 V VR = 55 V VR = 1 V, f = 1 MHz IF=IR=10mA, Irr=1mA,RL=100
1SS84
10
-1
10
-5
Ta=125°C
-6
10 (A)
-2
10 Reverse current I R (A)
Ta=75°C 10
-7
Forward current I F
25 °C Ta =75 °C Ta= 25° Ta= C -25 °C
10
-3
Ta
=1
10
-4
10
-8
Ta=25°C
10
-5
10
-9
Ta= 0 °C
10
-6
10 0 0.6 0.2 0.8 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 1.0
-10
0
60 20 40 80 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
100
f=1MHz
10 Capacitance C (pF)
1.0
10
-1
1.0
10 Revers……
