器件名称: 1N5393
功能描述: TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
文件大小: 39.83KB 共1页
简 介:CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N5391 THRU 1N5399
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V CURRENT：1.5A
FEATURES
High reliability Low leakage Low forward voltage drop High current capability
DO-15
1.0(25.4) MIN. .300(7.6) .230(5.8)
.034(0.9) .028(0.7)
DIA.
MECHANICAL DATA
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.38 grams
.140(3.6) .104(2.6) 1.0(25.4) MIN.
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%.
SYMBOL 1N5391 1N5392 1N5393 1N5395 1N5397 1N5398 1N5399
units
V V V A A V
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TL=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.5A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C
VRRM VRMS VDC Io IFSM VF
50 35 50
100 70 100
200 140 200
400 280 400 1.5 50 1.1 5.0 500 30 20 50
600 420 600
800 560 800
1000 700 1000
@ TA=100°C IR Maximum Full Load Reverse Current Average, Full Cycle .375”(9.5mm) lead length at TL=75°C CJ Typical Junction Capacitance (N……
