器件名称: 1N5260B
功能描述: SILICON PLANAR ZENER DIODES
文件大小: 65.03KB 共3页
简 介:CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N5221B THRU 1N5272B
SILICON PLANAR ZENER DIODES FEATURES
Voltage Range: 2.7V to 110V Double siug type construction
DO-41
1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7)
DIA. DIA.
MECHANICAL DATA
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.33 grams
.107(2.7) .080(2.0) 1.0(25.4) MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%.
Absolute Maximum Ratings (Ta=25°C)
SYMBOL
VALUE 0.51) 150
units
W °C
Zener Current see Table “Characterstics” Power Dissipation at Tamb=25°C Junction Temperature
1)
Ptot TJ
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
Characteristics at Tamb=25°C
SYMBOL
Min. --
Typ. --
Max. 1.2
units
V
Forward Voltage at IF=250mA
VF
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
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CHONGQING PINGYANG ELECTRONICS CO.,LTD. SILICON PLANAR POWER ZENER DIODES
Zener Voltage range1) TYPE Vznom4) V 2.4
2.5 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36
Dynamic recsista……
