器件名称: W34NB20
功能描述: N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET
文件大小: 232.99KB 共10页
简 介:N-CHANNEL 200V - 0.062 - 34A TO-247 PowerMESH MOSFET
Table 1. General Features
Type STW34NB20 VDSS 200 V RDS(on) < 0.075 ID 34 A
STW34NB20
Figure 1. Package
FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.062
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EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
TO-247
1 3 2
DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS ■ SWITCH MODE POWER SUPPLIES (SMPS)
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Figure 2. Internal Schematic Diagram
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING
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Table 2. Order Codes
Part Number STW34NB20 Marking W34NB20 Package TO-247 Packaging TUBE
REV. 2 April 2004 1/10
STW34NB20
Table 3. Absolute Maximum Ratings
Symbol VDS VDGR VGS ID ID IDM
(1)
Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (cont.) at TC = 25 °C Drain Current (cont.) at TC = 100 °C Drain Current (pulsed) Total Dissipation at TC = 25 °C Derating Factor
Value 200 200 ± 30 34 21 136 180 1.44 -65 to 150 150
Unit V V V A A A W W°/C °C °C
Ptot
Tstg Tj
Storage……
