器件名称: W29NK50ZD
功能描述: N-CHANNEL 500 V - 0.11
文件大小: 95.47KB 共7页
简 介:STW29NK50ZD
N-CHANNEL 500 V - 0.11 - 29A TO-247 Fast Diode SuperMESH MOSFET
PRODUCT PREVIEW
Table 1: General Features
TYPE STW29NK50ZD
s s s s s s
Figure 1: Package
ID 29 A PW 350 W
VDSS 500 V
RDS(on) < 0.15
s
TYPICAL RDS(on) = 0.11 HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY TIME
3 2 1
TO-247
DESCRIPTION The Fast SuperMesh series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh” Advanced Technology.
Figure 2: Internal Schematic Diagram
APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE
Table 2: Order Codes
PART NUMBER STW29NK50ZD MARKING W29NK50ZD PACKAGE TO-247 PACKAGING TUBE
Rev. 2 December 2004 1/7
STW29NK50ZD
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 K) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 K) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 500 500 ± 30 29 18.27 116 350 2.77 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C
(*) Pulse width limited by safe operating are……
