器件名称: W28NK60Z
功能描述: N-CHANNEL 600 V - 0.155
文件大小: 224.12KB 共10页
简 介:STW28NK60Z
N-CHANNEL 600 V - 0.155 - 27A TO-247 Zener-Protected SuperMESH MOSFET
Table 1: General Features
TYPE STW28NK60Z
s s s s s s
Figure 1: Package
ID 27 A PW 350 W
VDSS 600 V
RDS(on) < 0.185
TYPICAL RDS(on) = 0.155 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247
3 2 1
DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MSmesh products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES s WELDING MACHINES s LIGHTING
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
PART NUMBER STW28NK60Z MARKING W28NK60Z PACKAGE TO-247 PACKAGING TUBE
Rev. 1 November 2004 1/10
STW28NK60Z
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 K) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 K) Peak Diode Recovery voltage slope Storage Temperat……
