器件名称: W26NM50
功能描述: N-CHANNEL 500V - 0.10ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET
文件大小: 234.43KB 共9页
简 介:STW26NM50
N-CHANNEL 500V - 0.10 - 30A TO-247 MDmesh MOSFET
Table 1: General Features
TYPE STW26NM50
s s s s
Figure 1: Package
RDS(on) < 0.120 ID 30 A
VDSS 500 V
TYPICAL RDS(on) = 0.10 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE
DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE STW26NM50 MARKING W26NM50 PACKAGE TO-247 PACKAGING TUBE
Rev. 9 February 2005 1/9
STW26NM50
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating J……
