器件名称: W20NK70Z
功能描述: N-CHANNEL 700V - 0.25W - 20A TO-247 Zener-Protected SuperMESH TM Power MOSFET
文件大小: 129.47KB 共6页
简 介:STW20NK70Z
N-CHANNEL 700V - 0.25 - 20A TO-247 Zener-Protected SuperMESHPower MOSFET
TARGET DATA TYPE STW20NK70Z
n n n n n n
VDSS 700 V
RDS(on) < 0.285
ID 20 A
Pw 300 W
TYPICAL RDS(on) = 0.25 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
3 2 1
TO-247
DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n IDEAL FOR OFF-LINE POWER SUPPLIES
n
ORDERING INFORMATION
SALES TYPE STW20NK70Z MARKING W20NK70Z PACKAGE TO-247 PACKAGING TUBE
June 2003
1/6
STW20NK70Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 700 700 ± 30 20 12 80 300 2.4 TBD TBD -55 to 150 Un……
