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1N4007G

器件名称: 1N4007G
功能描述: TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
文件大小: 39.61KB    共1页
生产厂商: CHONGQING
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简  介:CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N4001G THRU 1N4007G TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE:50-1000V CURRENT:1.0A FEATURES High reliability Low leakage Low forward voltage drop High current capability DO-41 1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7) DIA. DIA. MECHANICAL DATA Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.33 grams .107(2.7) .080(2.0) 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N4001G 1N4002G 1N4003G1N4004G1N4005G 1N4006G1N4007G units Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375”(9.5mm) lead length at TL=75°C VRRM VRMS VDC Io 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF 30 1.1 5.0 A V IR 500 30 15 50 A CJ Typical Junction Capa……
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