器件名称: 1N4006G
功能描述: TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
文件大小: 39.61KB 共1页
简 介:CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4001G THRU 1N4007G
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V CURRENT：1.0A
FEATURES
High reliability Low leakage Low forward voltage drop High current capability
DO-41
1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7)
DIA. DIA.
MECHANICAL DATA
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.33 grams
.107(2.7) .080(2.0) 1.0(25.4) MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%.
SYMBOL 1N4001G 1N4002G 1N4003G1N4004G1N4005G 1N4006G1N4007G units
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375”(9.5mm) lead length at TL=75°C
VRRM VRMS VDC Io
50 35 50
100 70 100
200 140 200
400 280 400 1.0
600 420 600
800 560 800
1000 700 1000
V V V A
IFSM VF
30 1.1 5.0
A V
IR
500 30 15 50
A
CJ Typical Junction Capa……
