器件名称: 1N4002
功能描述: TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
文件大小: 39.87KB 共1页
简 介:CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4001 THRU 1N4007
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V CURRENT：1.0A
FEATURES
High reliability Low leakage Low forward voltage drop High current capability
DO-41
1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7)
DIA. DIA.
MECHANICAL DATA
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.33 grams
.107(2.7) .080(2.0) 1.0(25.4) MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%.
SYMBOL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
units
V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375”(9.5mm) lead length at TL=75°C
VRRM VRMS VDC Io
50 35 50
100 70 100
200 140 200
400 280 400 1.0
600 420 600
800 560 800
1000 700 1000
IFSM VF
30 1.1 5.0
A V
IR
500 30 15 50
A
CJ Typical Junction Capacitan……
