器件名称: 1N119WS
功能描述: SILICON EPITAXIAL PLANAR DIODE
文件大小: 312.78KB 共3页
简 介:1N119WS
SILICON EPITAXIAL PLANAR DIODE
APPLICATIONS High speed switching
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
W2
Top View Marking Code: "W2" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Average Forward Current Peak Forward Current Non-repetitive Peak Forward Current (t = 1 μs) Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM TJ Tstg
Value 85 80 100 300 4 125 - 55 to + 125
Unit V V mA mA A
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 10 mA at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 50 Symbol VF Max. 0.8 1.2 0.1 2 3 Unit V
IR CT trr
A pF ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/04/2009
1N119WS
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/04/2009
1N119WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : ……
