器件名称: SB1030330ML
功能描述: SMD POWER INDUCTOR
文件大小: 359.9KB 共7页
简 介:SEMiX252GB126HDs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 242 170 150 300 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 228 158 150 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 1000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX2s
Trench IGBT Modules
SEMiX252GB126HDs
Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Preliminary Data Features
Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532
Tj = 150 °C
Typical Applications
AC inverter drives UPS Electronic Welding
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 150 A Tj = 125 °C RG on = 3 RG off = 3 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 10.7 0.56 0.48 1200 5.00 300 45 20 570 110 21 0.15 Tj = 25 °C Tj = 125 °C 5 1.7 2.00 1 0.9 4.7 7.3 5.8 0.1 2.1 2.45 1.2 1.1 6.0 9.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W
Remarks
Case temperatur limited to TC……