器件名称: N08L63W2AB7I
功能描述: 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K
文件大小: 192.63KB 共10页
简 介:N08L63W2A
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16 bit Overview
The N08L63W2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L63W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs
Features
Single Wide Power Supply Range 2.3 to 3.6 Volts Very low standby current 4.0A at 3.0V (Typical) Very low operating current 2.0mA at 3.0V and 1s(Typical) Very low Page Mode operating current 1.0mA at 3.0V and 1s (Typical) Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.8V Very fast output enable access time 25ns OE access time Very fast Page Mode access time tAAP = 25ns Automatic power down to standby mode TTL compatible three-state output driver
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