器件名称: 12FR
功能描述: 12AMP SILICON POWER DIODE
文件大小: 80.15KB 共1页
简 介:12F/12FR
12AMP SILICON POWER DIODE
DO-4
FEATURES All Diffused Series Available in Normal & Reverse Polarity Industrial Grade Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS
12F/FR
NAINA
12F/ 12FR
4 19 11.5 M6 x 1.0
A
12A 1.2V 250 A 60 A 250A 2Sec
C A FR 11A/F
IF (A)
Maximum Average Forward Current Te=1500C V FM Maximum peak forward voltage drop @ Rated IF(AV) IFSMMaximum peak one cycle (non-rep) surge current 10msec IFRMMaximum peak one cycle (non -rep) surge current 10msec I2t Maximum I2t rating (non-rep.) for 5 to 10 m sec.
F
C
10
THERMAL MECHANICAL SPECIFICATIONS
θJC
TJ Tstg W
Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (non-lubricated threads) Approx, weight
2oC/W -65oC to 150oC -65 oC to 150oC 0.14 M-Kg min, 0.17 M-kg max 7 gms.
ELECTRICAL RATINGS
TYPE VRRM
12F/12FR Max. repetitive peak voltage (v)
10 100 70 100 40 100
20 200 140 200 80 100
40 400 280 400 160 100
60 600 420 60 240 100
80 800 560 800 320 100
100 1000 700 1000 400 100
120 1200 840 1200 480 100
140
160
1400 1600 980 1120
VR(RMS) VR
Max. R.M.S. reverse voltage (V) Max. D.C. Blocking Voltage (V) Recommended R.M.S. working Voltage(v) Max. Average reverse leakage current @ VRMM Tc 250C uA
1400 1600 560 100 640 100
IR(AV)
NAINA SEMICONDUCTOR LTD. D95,SECTOR 63 NOIDA(INDIA) e-mail : sales@nainasemi.com, web site : www.nainasemi.com
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