器件名称: 150U10
功能描述: SILICON POWER DIODE
文件大小: 87.34KB 共1页
简 介:150U/150UR
SILICON POWER DIODE
DO - 8
FEATURES Diffused Series Available in Normal & Reverse Polarity Industrial Grade Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 150A 1.4V 3000A 750A 45,000 A2 Sec
NAINA
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj Tstg
W
Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight
0.250C/W -650C to 1500C -650C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms.
ELECTRICAL RATINGS TYPE VRRM 150U/150UR Max. repetitive peak reverse voltage (v) VR(RMS) VR Max. R.M.S. reverse voltage (V) Max. D.C. Blocking Voltage (V) 10 100 70 100 20 200 140 200 40 400 280 400 60 600 420 600 80 800 560 800 100 1000 700 1000 120 1200 840 1200 140 160
1400 1600 980 1120
1400 1600 560 200 640 200
IR(AV)
Recommended R.M.S. working 40 80 160 240 320 400 480 Voltage(v) Max. Average reverse leakage 200 200 200 200 200 200 200 current @ VRRM Tc 250C (uA) NAINA SEMICONDUCTOR LTD., D-95,SECTOR 63, NOIDA(INDIA) e-mail:sales@nainasemi.com, web site: www.nainasemi.com
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