器件名称: 1SS286
功能描述: Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小: 65.36KB 共5页
简 介:1SS286
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0142-0300 Rev.3.00 May 24, 2007
Features
Very low reverse current. Detection efficiency is very good. Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Part No. 1SS286 Cathode GREEN Mark 7 Package Name MHD Package Code GRZZ0002ZC-A
Pin Arrangement
7
1 Cathode band
2
1. Cathode 2. Anode
REJ03G0142-0300 Rev.3.00 May 24, 2007 Page 1 of 4
1SS286
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature VR IF Pd Tj Tstg Symbol Value 25 35 150 100 55 to +100 Unit V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse voltage Reverse current Capacitance *3 Capacitance deviation Forward voltage deviation *1 ESD-Capability
*3
Symbol VF VR IR C C VF —
Min — 25 — — — — 10
Typ — — — — — — —
Max 0.60 — 10 1.20 0.10 10 —
Unit V
Test Condition IF = 10 mA IF = 10 A VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10mA C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
V
nA pF pF mV V
Notes: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V 2. Each group shall unify a multiple of 4 diodes 3. Not applied to taping-type products.
REJ03G0142-0300 Rev.3.00 May 24, 2007 Page 2 of 4
1SS286
Main Characteristic
10–1 10–2
Reverse current IR (A)
10–6
Forward current IF (A)
10–3 10–4 10–5 10–6 10–7 10–8 10–9
10–7
10–8
10–9
0
0……
