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1SS277

器件名称: 1SS277
功能描述: Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
文件大小: 23.23KB    共5页
生产厂商: HITACHI
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简  介:1SS277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch ADE-208-301A(Z) Rev 1 March 1996 Features Low forward resistance. (rf = 0.5 max) Ultra small glass package (UMD) enables easy mounting and high reliability. Ordering Information Type No. 1SS277 Cathode band Verdure 2nd band Blue Package Code UMD Outline 1 2 2nd band Cathode band 1. Cathode 2. Anode 1SS277 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Operation temperature Storage temperature Symbol VR IF Pd Topr Tstg Value 35 100 100 -20`+60 -55`+150 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Forward voltage Reverse current Capacitance Forward resistance Symbol VR VF IR C rf Min 35 Typ Max Unit V V nA pF Test Condition IR = 10A IF = 10 mA VR = 25V VR = 6V, f = 1 MHz IF = 2 mA, f = 100 MHz \ \ \ \ \ \ 1.0 10 1.2 0.5 \ \ \ \ 1SS277 Main Characteristic 10 -2 10 -9 10 Forward current I F (A) -4 10 -6 Reverse current I R (A) 10 -10 10 -11 10 -8 10 -10 10 -12 10 -12 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) -13 0 40 20 30 10 Reverse voltage VR (V) 50 Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 10 2 f=100MHz Forward resistance r f () Capacitance C (pF) 10 1.0 1.0 10 -1 10 -1 10 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 40 -2 1.0 10 -4 10-3 10-2 10 -1 Forward current I F (A) Fig.4 Forward resista……
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