器件名称: 1N3295
功能描述: SILICON POWER DIODE
文件大小: 87.25KB 共1页
简 介:1N3288-1N3297
SILICON POWER DIODE
DO - 8
FEATURES Diffused Series Available in Normal & Reverse Polarity Industrial Grade Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 100A 1.5V 2200A 500 A 24000 A2 Sec
NAINA
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj Tstg
W
Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight
0.400C/W -650C to 1500C -65 0C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms.
ELECTRICAL RATINGS TYPE VRRM Max. repetitive peak reverse voltage (v) VR(RMS) VR Max. R.M.S. reverse voltage(V) Max. D.C. Blocking Voltage (V)
1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296
100 70 100
200 140 200
300 210 300
400 280 400
500 350 500
600 420 600
800 560 800 320 200
1000 1200 700 840
1000 1200 400 200 480 200
IR(AV)
Recommended R.M.S. working 40 80 120 160 200 240 Voltage(v) Max. Average reverse leakage 200 200 200 200 200 200 current @ VRRM Tc 250C (uA) NAINA SEMICONDUCTOR LTD., D-95 ,SECTOR -63 NOIDA(INDIA) e-mail:sales@nainasemi.com, web site: www.nainasemi.com
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