器件名称: 1SS270
功能描述: Silicon Epitaxial Planar Diode for High Speed Switching
文件大小: 75.58KB 共5页
简 介:1SS270
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0566-0400 Rev.4.00 Sep 29, 2008
Features
Low capacitance. (C = 3.0 pF max) Short reverse recovery time. (trr = 3.5 ns max) Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Part No. 1SS270 Cathode Band Light Blue Package Name MHD Package Code GRZZ0002ZC-A
Pin Arrangement
1 Cathode band
2
1. Cathode 2. Anode
REJ03G0566-0400 Rev.4.00 Sep 29, 2008 Page 1 of 4
1SS270
Absolute Maximum Ratings
(Ta = 25°C)
Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IO IFM IFSM * Pd Tj Tstg Value 35 30 150 450 1 250 175 –65 to +175 Unit V V mA mA A mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C trr Min — — — — Typ — — — — Max 0.8 1.0 3.0 3.5 Unit V μA pF ns Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Ω
REJ03G0566-0400 Rev.4.00 Sep 29, 2008 Page 2 of 4
1SS270
Main Characteristic
10–1 10–4
10–5 10–2
Reverse current IR (A) Forward current IF (A)
10–6
10–7
10
–3
10–8
10–4
0
0.2
0.4
0.6
0.8
1.0
1.2
10–9
0
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Re……
