器件名称: 2N5320
功能描述: SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小: 172.51KB 共3页
简 介:NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VCEV VEBO IC IB PD
Ratings
Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 1.5V) Emitter-Base Voltage (IC = 0) Collector Current Base Current @ Tamb = 25° Total Power Dissipation @ Tcase= 25° 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321
Value
75 50 100 75 100 75 6 5 2 1 1
Unit
V V V V A A Watts
10 -65 to +200 -65 to +200 °C °C
TJ TStg
Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case 2N5320 2N5321 2N5320 2N5321
Value
175 17.5
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/3
NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO IEBO VCEO VCEV VEBO hFE (1) VCE(SAT) (1) VBE (1) fT ton toff
Ratings
Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter Voltage Transition frequency Turn-on Time Turn-off Time
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