器件名称: 2N4033
功能描述: GENERAL PURPOSE AMPLIFIERS AND SWITCHES
文件大小: 235.64KB 共3页
简 介:PNP 2N4030 – 2N4031 – 2N4032 – 2N4033
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
-VCBO
Collector-Base Voltage IE = 0
Ratings
2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 @ Tcase= < 25° @ Tamb= < 25°
Value
60 80 60 80 60 80 60 80 5
Unit
V
-VCEO
Collector-Emitter Voltage IB = 0
V
-VEBO
Emitter-Base Voltage IC = 0
V
-IC Ptot TJ TStg
Collector Current
1 4 0.8 200 -65 to +200
A
Watts °C °C
Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-c RthJ-amb
Ratings
Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient
Value
44 218
Unit
K/ W K/ W
COMSET SEMICONDUCTORS
1/3
PNP 2N4030 – 2N4031 – 2N4032 – 2N4033
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE = 0 ;VCB = 50 V IE = 0 ;VCB = 60 V IE = 0 ; V VCB =50 V Tamb = 150°c VCB =60 V IE = 0 ;VCB = 50 V IE = 0 ;VCB = 60 V IE = 0 ; V VCB =50 V Tamb = 150°c VCB =60 V
Min
60 80 60 80 60 80 60 80 5 -
Typ Mx Unit
50 50 50 50 0.15 0.5 1 0.9 1.1 1.2 120 300 2/3 V nA A nA A
-ICBO
Collector – Cutoff Current
-VCB0
Collector – Base Breakdown -IC = 10 A IE = 0 Voltage
-VCE0 (*)
Collector – Emitter Breakdown Voltage
-IC = 10 mA
IB = 0
-VEB0
Emitter – Base B……
