器件名称: 2N2894
功能描述: HIGH-SPEED SATURATED SWITCHES
文件大小: 81.37KB 共2页
简 介:NPN 2N2894 HIGH-SPEED SATURATED SWITCHES
The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VCES VEBO IC PD TJ TStg
Ratings
Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage(VBE = 0) Emitter-Base Voltage (IC = 0) Collector Current @ Tamb = 25° Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° @ Tcase<100°
Value
-12 -12 -12 -4 -200 0.36 1.2 1 -65 to +200 -65 to +200
Unit
V V V V mA Watts °C °C
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case
Value
486 146
Unit
°C/ W °C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO ICES VCEO (*) VCES VCBO VEBO
Ratings
Collector Cutoff Current Collector Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage
Test Condition(s)
VCB =-6 V, IE =0V, Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, IB =0 VBE =0 V, IC =-10 A IC =-10 A, IE =0 IE =-100 A, IC =0
Min
-12 -12 -12 -4
Typ
-
Mx
-10 -80 -
Unit
A nA V V V V
COMSET SEMICONDUCTORS
1/2
NPN 2N2894
Symbol
hFE (*)
Ratings
DC Current Gain
Test Condition(s)
IC =-10 mA, VCE =-0.3 V IC =-30 mA, VCE =-0.5 V IC =-100 mA, VCE =-1 V IC =150 mA,……
