器件名称: 184T2
功能描述: NPN SILICON TRANSISTORS, DIFFUSED MESA
文件大小: 264.24KB 共4页
简 介:COMSET
SEMICONDUCTORS
BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TS
Collector-Emitter Voltage
Ratings
BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2
Value
180 200 250 300 400 500 10
6 3
Unit
V V V A A Watts
Collector-Base Voltage
Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25°
87.5
-65 to +200
°C
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COMSET
SEMICONDUCTORS
BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case BDY26, 183T2 BDY27, 184T2 BDY28, 185T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*) Collector-Emitter Cutoff Current
Test Condition(s) BDY26, 183T2 BDY27, 184T2 BDY28A, 185T2A BDY28B, 185T2B BDY28C, 185T2C BDY26 BDY27 BDY28 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2
Min Typ Mx Unit
180 200 250 250 220 1.0
VCEO(BR)
IC=50 mA, IB=0
V
ICEO
VCE=180 V VCE=200 V VCE=250 V
mA
IEBO
Emitter-Base Cutoff Current VEB=10 V
VCE=250 V VBE=0 ……
