器件名称: 2N3584
功能描述: NPN SILICON POWER TRANSISTORS.
文件大小: 166.07KB 共3页
简 介:NPN 2N3583 – 2N3584 – 2N3585
NPN SILICON POWER TRANSISTORS.
High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO VCEO
VEBO
Ratings
Collector-Base Voltage (IE= 0) 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 tp = 10ms @ Tmb = 70°C
Value
250 330 440 175 250 300 6 1 2 2 5 1 35 200 -65 to +200
Unit
V
Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Peak Collector Current Base current Total power Dissipation Junction Temperature Storage Temperature
V V A A A Watts °C °C
IC ICM IB PT TJ TStg
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Thermal Resistance, Junction to Case Thermal Resistance, Junction to ambient in free air
Value
5 87.5
Unit
°C/W
COMSET SEMICONDUCTORS
1
NPN 2N3583 – 2N3584 – 2N3585
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter cut-off current
Test Condition(s) 2N3583
IB = 0 ; VCE = 150 V VBE = -1.5V ; VCE = 225 V VBE = -1.5V ; VCE = 340 V VBE = -1.5V ; VCE = 450 V VBE = -1.5V ; VCE = 225 V Tj= 150°C VBE = -1.5V ; VCE = 300 V Tj= 150°C IC = 0 ; VEB = 6 V
Min Typ Mx Unit
-
ICEO
2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3583 2N3584 2N3585 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585
10 5……
