器件名称: 150KR10
功能描述: SILICON POWER DIODE
文件大小: 88KB 共1页
简 介:45L/150K
SILICON POWER DIODE
DO - 8
FEATURES Diffused Series Available in Normal & Reverse Polarity Industrial Grade Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 150A 1.4V 3570A 750A 64,000 A2 Sec
NAINA
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj Tstg
W
Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight
0.250C/W -650C to 1500C -650C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms.
ELECTRICAL RATINGS TYPE VRRM 45L/150K Max. repetitive peak reverse voltage (v) VR(RMS) VR Max. R.M.S. reverse voltage (V) Max. D.C. Blocking Voltage (V) Recommended R.M.S. working Voltage(v) Max. Average reverse leakage current @ VRRM Tc 250C (uA) 10 100 70 100 40 200 20 200 140 200 80 200 40 400 280 400 160 200 60 600 420 600 240 200 80 800 560 800 320 200 100 1000 700 1000 400 200 120 1200 840 1200 480 200 140 160
1400 1600 980 1120
1400 1600 560 200 640 200
IR(AV)
NAINA SEMICONDUCTOR LTD., D-95,SECTOR-63, NOIDA(INDIA) e-mail:sales@nainasemi.com, web site:www.nainasemi.com
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