器件名称: 1214-110M
功能描述: 110 Watts - 50 Volts, 330
文件大小: 111.11KB 共4页
简 介:1214-110M
110 Watts - 50 Volts, 330s, 10% Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 s pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE 55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 270 Watts
75 Volts 3.0 Volts 8 Amps - 65 to + 200oC + 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pg ηc Rl Droop Flatness VSWR1 VSWRs
CHARACTERISTICS
TEST CONDITIONS Freq = 1200 – 1400 MHz Vcc = 50 Volts Pin = 20 Watts Pulse Width = 330s Duty Factor = 10%
MIN
TYP
MAX
UNITS
Power Out Power Gain Collector Efficiency Input Return loss Droop Flatness
Load Mismatch Tolerance Load Mismatch - Stability
110 7.4 50 10
170 55 0.5 1.25 3:1 1.5:1
Watts dB % dB dB dB
FUNCTIONAL CHARACTERISTICS @ 25°C Bvces Ices θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 100 mA Vce = 50 Volts Rated Pulse Condition 75 10 0.65 Volts mA o C/W
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES W……
