器件名称: 2N2905
功能描述: SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小: 195.63KB 共3页
简 介:PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC PD PD TJ TStg
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25°
Ratings
2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905
Value
-60 -40 -60 -60 -5 -5 -600 0.6
Unit
V V V mA Watts
3 200 -65 to +200 °C °C
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N2905A 2N2905 2N2905A 2N2905
Value
58.3 292
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS
COMSET SEMICONDUCTORS 1/3
PNP 2N2905 – 2N2905A
TC=25°C unless otherwise noted
Symbol
ICBO ICEX VCEO VCBO VEBO
Ratings
Collector Cutoff Current
Test Condition(s)
VCB=-50 V, IE=0 VCB=-50 V, IE=0, Tj=150°C
Min Typ Mx Unit
-10 -20 -10 -20 -50 300 120 -0.4 -1.6 V -1.3 -2.6 nA A nA V V V
Collector Cutoff Current
VCE=-30 V, VBE=0.5V
Collector Emitter Breakdown IC=-10 mA, IB=0 Voltage Collector Base Breakdown IC=-10 A, IE=0 Voltage Emitter Base Breakdown IE=-10 A, IC=0 Voltage
IC=-0.1 mA, VCE=-10 V IC=-1 mA, VCE=-10 V
hFE
DC Current Gain
IC=-……
