器件名称: 2N2646
功能描述: SILICON UNIJUNCTION TRANSISTORS
文件大小: 104.99KB 共3页
简 介:2N2646 2N2647
SILICON UNIJUNCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s.
ABSOLUTE MAXIMUM RATINGS
Tj=125°C unless otherwise noted
Symbol
VB2E Ie ie VB2B1 PD TJ TStg
Ratings
2N2646 2N2647
30 50 2
35 300
Unit
V mA A V mW °C °C
Emitter-Base2 Voltage RMS Emitter Current Peak Pulse Emitter Current * Interbase Voltage RMS power Dissipation Junction Temperature Storage Temperature Capacitor discharge – 10F or less, 30volts or less.
-65 to +125 -65 to +150
2N2646 2N2647
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
η RBBO VEB1(sat) IB2(MOD) IEO V(BR)B1E
IV IP
Ratings
2N2646 Intrinsic stand-off ratio VB2B1 = 10V 2N2647 Interbase Resistance , VB2B1 = 3V Emitter Saturation Voltage VB2B1 = 10V , IE = 50 mA Modulated Interbase Current VB2B1 = 10V , IE = 50 mA Emitter Revers Current VB2E = 30 V , IB1 = ……
