EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > HITACHI > 1SS199MHD

1SS199MHD

器件名称: 1SS199MHD
功能描述: Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小: 17.08KB    共5页
生产厂商: HITACHI
下  载:    在线浏览   点击下载
简  介:1SS199 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-299A (Z) Rev. 1 Features Detection efficiency is very good. Small temperature coefficient. Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS199 Cathode band Green Mark 3 Package Code MHD Outline 3 1 Cathode band 2 1. Cathode 2. Anode 1SS199 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η — Min 3.0 — — 70 70 Typ — — — — — Max — 100 3.0 — — Unit mA A pF % V Test Condition VF = 1V VR = 10V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k , CL = 20pF *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; I R ≥ 200A at VR = 10V 1SS199 10 –1 10 Forward current I F (A) –2 10 –3 10 –4 10 –5 0 0.8 1.2 1.6 0.4 Forward voltage VF (V) 2.0 Fig.1 Forward current Vs. Forward voltage –2 10 Reverse current I R (A) 10 –3 10 –4 10 –5 10 –6 0 5 10 15 25 20 Reverse voltage VR (V) 30 Fig.2 Reverse current Vs. Reverse voltage 1SS199 f = 1MHz 10 Capacitance C (pF) 1.0 10 –1 10–1 1.0 Reverse voltage VR (V) 10 Fig.3 Capacitance Vs. Reverse voltage 100 80 Rectifier efficiency η (%) 60 40 20 0 0 0.5 1.……
相关电子器件
器件名 功能描述 生产厂商
1SS199MHD Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2