器件名称: 1SS120
功能描述: Silicon Epitaxial Planar Diode for High Speed Switching
文件大小: 27.72KB 共6页
简 介:1SS120
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-167B (Z) Rev. 2 Aug. 1995 Features
Low capacitance. (C = 3.0pF max) Short reverse recovery time. (trr = 3.5ns max) Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS120 Cathode band Light Blue Mark 1 Package Code MHD
Outline
1
1 Cathode band
2
1. Cathode 2. Anode
1SS120
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Pd Tj Tstg Value 70 60 450 1 150 250 175 –65 to +175 Unit V V mA A mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr* Min — — — — Typ — — — — Max 0.8 0.1 3.0 3.5 Unit V A pF ns Test Condition I F = 10mA VR = 60V VR = 1V, f = 1MHz I F = 10mA, VR = 6V, RL = 50
Note: Reverse recovery time test circuit
DC Supply
0.1F
3k Sampling Rin = 50 Oscilloscope
Ro = 50 Pulse Generator
Trigger
2
1SS120
10
–1
Forward current I F (A)
10
–3
10
–4
0
0.2
0.8 0.4 0.6 1.0 Forward voltage VF (V)
Ta = 125 °C Ta = 75°C Ta = 25°C Ta = –25° C
10
–2
1.2
Fig.1 Forward current Vs. Forward voltage
–4
10
Ta = 125°C 10 Reverse current I R (A)
–5
Ta = 75°C 10
–6
10
–7
Ta = 25°C 10
–8
10
–9
0
60 20 40 8……
